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SS8014-xxG
300mA Low-Noise LDO Regulators
FEATURES
Ultra low output noise of 30V (rms) Ultra low no-load supply current of 55A Ultra low dropout of 70mV at 50mA load Guaranteed 300mA output current Over-temperature and short-circuit protection Fixed: 3.30V (SS8014-33), 3.0V (SS8014-30) 2.85V (SS8014-29), 2.80V (SS8014-28) 2.70V (SS8014-27), 2.50V (SS8014-25) 1.80V(SS8014-18), 1.50V(SS8014-15) Max. supply current in shutdown mode < 1A Stable with low cost ceramic capacitors
DESCRIPTION
The SS8014-xxG is a low supply-current, low-dropout linear regulator that comes in a space-saving SOT23-5 package. The supply current at no-load is 55A. In the shutdown mode, the maximum supply current is less than 1A. Operating voltage range of the SS8014 is from 2.5V to 5.5V. The over-current protection limit is set at 500mA typical and 400mA minimum. An over-temperature protection circuit is built-in to the SS8014 to prevent thermal overload. These power saving features make the SS8014 ideal for use in such battery-powered applications as notebook computers, cellular phones, and PDA's.
APPLICATIONS
Notebook Computers Cellular Phones PDA Hand-Held Devices Battery-Powered Application
ORDERING INFORMATION
Part Number Marking Voltage
SS8014-15GTR SS8014-18GTR SS8014-25GTR SS8014-27GTR SS8014-28GTR SS8014-29GTR SS8014-30GTR SS8014-33GTR
4Gxx 4Hxx 4Exx 4Axx 4Bxx 4Fxx 4Cxx 4Dxx
1.50V 1.80V 2.50V 2.70V 2.80V 2.85V 3.0V 3.30V
This device is only available with Pb-free lead finish (second-level interconnect).
Pin Configuration
Typical Operating Circuit
IN
1
5
OUT
IN
OUT
OUTPUT VOLTAGE
GND
2
SS8014-xx
BATTERY 4 BYP
+C IN _ 1F
SS8014-xx
SHDN BYP GND
COUT 1F CBYP
10nF
SHDN
3
SOT23-5
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Absolute Maximum Ratings
VIN to GND...............................................................................................-0.3V to +7V Output Short -Circuit Duration...............................................................................Infinite All Other Pins to GND......................................................................-0.3V to (V IN + 0.3V) Continuous Power Dissipation (TA = +25C) SOT 23-5 ......................................................................................................520 mW Operating Temperature Range...................................................................-40C to +85C Junction Temperature..........................................................................................+150C
JA
.......See Recommended Minimum Footprint (Figure 2)...............................................240C/Watt
Storage Temperature Range......................................................................-65C to +160C Lead Temperature (soldering, 10sec).....................................................................+260C
Electrical Characteristics
(V IN=VOUT(STD)+1V, V SHDN =VIN, TA=TJ =25C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS
Input Voltage (Note 2) Output V oltage Accuracy Maximum Output Current Current Limit (Note 3) Ground Pin Current V IN V OUT Variation from specified VOUT, IOUT=1mA,VOUT2.5V version For SS8014-18, I OUT =1mA For SS8014-15, I OUT =1mA
MIN TYP MAX UNITS
Note2 -2 -3 -4 5.5 2 3 4 300 500 55 120 145 265 2 70 230 250 380 510 450 600 500 660 760 960 910 1220 0.1 0.28 0.35 2 57 30 52 35 30 26 VIN - 0.7 0.4 0.003 0.1 1 150 15 C C V A V RMS V % mA mA A
ILIM IQ VIN =3.6V ILOAD = 0mA ILOAD = 50mA ILOAD = 300mA
Dropout Voltage (Note 4)
V DROP
Line Regulation Load Regulation (Note 5) Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output V oltage Noise (10Hz to 100kHz) (SS8014-18) SHUTDOWN
SHDN Input Threshold SHDN Input Bias Current Shutdown Supply Current THERMAL PROTECTION Thermal Shutdown Temperature Thermal Shutdown Hysteresis
V LNR V LDR PSRR
IOUT = 1mA IOUT = 50mA, V OUT 2.7V Version V O (NOM) 3.0V 2.5V V O (NOM) 2.85V IOUT = 150mA V O (NOM) = 1.8V V O (NOM) = 1.5V V O (NOM) 3.0V 2.5V V O (NOM) 2.85V IOUT =300mA V O (NOM) = 1.8V V O (NOM) = 1.5V VIN=VOUT+100mV to 5.5V, IOUT = 1mA IOUT = 1mA to 150mA IOUT = 1mA to 300mA IOUT = 30mA CBYP = 10nF, f = 120HZ
mV
%/V % dB ppm/C
V O/ T IOUT = 50mA, TJ = 25C to 125C
COUT = 1F, IOUT COUT = 1F, IOUT V IN=V OUT +1V COUT = 1F, IOUT 100nF COUT = 1F, IOUT Regulator enabled Regulator shutdown V SHDN = V IN TA = +25C V OUT = 0V TA = +25C = 150mA, CBYP =1nF = 150mA, CBYP =10nF = 150mA, CBYP = = 1mA, CBYP = 10nF
en
V IH V IL ISHDN IQ SHDN TSHDN TSHDN
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Note 1: Limits are 100% production tested at TA= +25C. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. Note 2: VIN (min) =VOUT (STD)+VDROPOUT Note 3: Not tested. For design purposes, the current limit should be considered 400mA minimum to 600m A maximum. Note 4: The dropout voltage is defined as (VIN - VOUT) when VOUT is 100m V below the value of VOUT for VIN = VOUT +1V. For the performance of e ach SS8014-xx version, see "Typical Performance Characteristics". Note 5: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 1mA to 300mA. Changes in output due to heating effects are covered by the thermal regulation specification.
Typical Performance Characteristics
(V IN = V O+1V, CIN=1F, COUT=1F, V SHDN = VIN, SS8014-33, TA =25C, unless otherwise noted.)
Output Voltage vs. Load Current
3.340 3.330 3.320
Ground Current vs. Load Current
400 350
SS8014-33
Ground Current (A)
Output Voltage (V)
300 250 200 150 100 50 0
VIN=3.6V No Load
3.310 3.300 3.290 3.280 3.270 3.260 3.250 3.240 0 50 100 150 200 250 300
0
50
100
150
200
250
300
Load Current (mA)
Load Current (mA)
Output Voltage vs. Input Voltage
3.5 3.0
Supply Current vs. Input Voltage
400 350
No Load
ILOAD =300mA Supply Current (A)
300 250 200 150 100 50
Output Voltage (V)
2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6
I LOAD =50mA
ILOAD=0mA
0 0 1 2 3 4 5 6
Input Voltage (V)
Input Voltage (V)
Dropout Voltage vs. Load Current
1000 900
Ouptut Noise 10HZ to 100KHZ
TA=25C
SS8014-18 SS8014-25 SS8014-15
Top to down SS8014-27 SS8014-28 SS8014-30 SS8014-33 SS8014-29 0 50 100 150 200 250 300
Dropout Voltage (mV)
800 700 600 500 400 300 200 100 0
Loading (mA)
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Typical Performance Characteristics
(continued)
Ground Current vs. Temperature
100
SHDN Input Bias Current vs. Temperature
0.20
Ground Current (A)
80
SHDN Input Bias Current (A)
SS8014-33 V IN = 4.3V IOUT =0A
0.10
SS8014-33 VIN=4.3V VSHDN =VIN
60
0.00
40
-0.10
20
0
-40 -30 -20 -10 0 10 2 0 30 40 5 0 60 70 80 9 0 10 11 1 2 13 0000
-0.20
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 1 0 11 12 1 3 0000
Junction Temperature TJ (C)
Junction Temperature TJ (C)
Shutdown Supply Current vs. Temperature
1.00 3.36 SS8014-33 VIN = 4.3V
Output Voltage vs. Temperature
3.34 SS8014-33 ILOAD =1mA V IN=5.5V
Shutdown Supply Current(A)
0.60
Output Voltage (V)
3.32
0.20
3.30 VIN=4.3V 3.28 VIN=3.4V 3.26
-0.20
-0.60
-1.00
-40 -30 -20 -10 0 10 20 30 40 5 0 60 70 8 0 90 10 1 1 12 13 0000
3.24
-40 -30 -20 -10 0 1 0 20 30 4 0 50 60 7 0 80 90 1 0 11 12 1 3 0000
Junction Temperature TJ (C)
Junction Temperature T J (C)
Dropout Voltage vs. Temperature
400 350 SS8014-33
Dropout Voltage (mV)
300 250 200 150 100 50 ILOAD =0mA 0
-40 -30 -20 -10 0 10 2 0 30 40 5 0 60 70 8 0 90 10 11 1 2 13 0000
ILOAD=150mA
ILOAD =50mA
Junction Temperature T J (C)
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Typical Performance Characteristics
Line Transient
(continued)
Load Transient
Load Transient
Power Supply Rejection Ripple
80 70 SS8014-29 VIN=5V +2V(p-p) RL=100O CBYP =10nF
Power Supply Rejection Ratio(db)
60 50 40 30 20 10 0 0.1
1
10
100
Frequency(KHZ)
Output Noise vs. Bypass Capacitance
70 60 SS8014-18 VIN=2.8V TA=25C COUT =1F 70 60
Output Noise vs. Load Current
SS8014-18 VIN=2.8V TA=25C COUT=1F 40 30 20 10 0
Output Noise (Vrms)
50 40 30 20 10 0 0.001
Output Noise (Vrms)
0.1
50
0.01
1
10
100
1000
Bypass Capacitance (F)
Load Current (mA)
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Typical Performance Characteristics
Power On Response Waveform
(continued)
Power Off Response Waveform
Shutdown Delay Waveform
Shutdown Delay Waveform
Turn-On Time vs. Bypass Capacitance
100000 Propagation Delay Time 10000
Turn-Off Time vs. Bypass Capacitance
1000 Propagation Delay Time
Time (s)
100
Time (s)
1000
100
10 Rise Time 1 0.1 1
SS8014-33 ILOAD =150mA CIN=COUT=1F VIN=4.3V power already VSHDN=0 to 4.3V
Fall Time 10
SS8014-33 ILOAD =150mA CIN=COUT=1F VIN=4.3V power already VSHDN=4.3V to 0V
1 10 100 0.1 1 10 100
Bypass Capactor (nF)
Bypass Capacitor (nF)
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Pin Description
PIN
1 2 3 4 5
NAME
IN GND
SHDN
FUNCTION
Regulator Input. Supply voltage can range from +2.5V to +5.5V. Bypass with 1F to GND. Ground. This pin also functions as a heatsink. Solder to large pads or the circuit board ground plane to maximize thermal dissipation. Active-High Enable Input. A logic low reduces the supply current to less than 1A. Connect to IN for normal operation. This is a reference bypass pin. It should connect external 10nF capacitor to GND to reduce output noise. Bypass capacitor must be no less than 1nF. (CBYP 1nF) Regulator Output. Sources up to 150mA. Bypass with a 1F, < 0.2 typical ESR capacitor to GND.
BYP OUT
Detailed Description
The block diagram of the SS8014-xx is shown in Figure 1. It consists of an error amplifier, 1.25V bandgap reference, PMOS output transistor, internal feedback voltage divider, shutdown logic, over current protection circuit, and over temperature protection circuit. The internal feedback voltage divider's central tap is connected to the non-inverting input of the error amplifier. The error amplifier compares non-inverting input with the 1.25V bandgap reference. If the feedback voltage is higher than 1.25V, the error amplifier's output becomes higher so that the PMOS output transistor has a smaller gate-to-source voltage (VGS). This reduces the current carrying capability of the PMOS output transistor, as a result the output voltage decreases until the feedback voltage is equal to 1.25V. Similarly, when the feedback
voltage is less than 1.25V, the error amplifier causes the output PMOS to conduct more current to pull the feedback voltage up to 1.25V. Thus, through this feedback action, the error amplifier, output PMOS, and the voltage-divider effectively form a unity-gain amplifier with the feedback voltage forced to be the same as the 1.25V bandgap reference. The output voltage, VOUT, is then given by the following equation: VOUT = 1.25 (1 + R1/R2). (1) Alternatively, the relationship between R1 and R2 is given by: R1 = R2 (VOUT / 1.25 + 1). (2)
IN SHDN
SHUTDOWN LOGIC ERROR AMP OVER CURRENT PROTECT & DYNAMIC FEEDBACK
I
OUT BYP
R1
OVER TEMP. PROTECT 1.25V Vref
CBYP R2
GND
Figure 1. Functional Diagram
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Over Current Protection The SS8014 uses a current mirror to monitor the output current. A small portion of the PMOS output transistor's current is mirrored onto a resistor such that the voltage across this resistor is proportional to the output current. This voltage is compared against the 1.25V reference. Once the output current exceeds the limit, the PMOS output transistor is turned off. Once the output transistor is turned off, the current monitoring voltage decreases to zero, and the output PMOS is turned on again. If the over current condition persist, the over current protection circuit will be triggered again. Thus, when the output is shorted to ground, the output current will be alternating between 0 and the over current limit. The typical over current limit of the SS8014 is set to 350mA. Note that the input bypass capacitor of 1F must be used in this case to filter out the input voltage spike caused by the surge current due to the inductive effect of the package pin and the printed circuit board's routing wire. Otherwise, the actual voltage at the IN pin may exceed the absolute maximum rating. Over Temperature Protection To prevent abnormal temperature from occurring, the SS8014 has a built-in temperature monitoring circuit. When it detects the temperature is above 150oC, the output transistor is turned off. When the IC is cooled down to below 135oC, the output is turned on again. In this way, the SS8014 will be protected against abnormal junction temperature during operation. Shutdown Mode When the SHDN pin is connected a logic low voltage, the SS8014 enters shutdown mode. All the analog circuits are turned off completely, which reduces the current consumption to only the leakage current. The output is disconnected from the input. When the output has no load at all, the output voltage will be discharged to ground through the internal resistor voltage divider. Operating Region and Power Dissipation Since the SS8014 is a linear regulator, its power dissipation is always given by P = IOUT (VIN - VOUT). The maximum power dissipation is given by: PDMAX = (TJ - TA)/JA = (150-25) / 240 = 520mW where (TJ - TA) is the temperature difference between the SS8014 die and the ambient air, and JA, is the thermal resistance of the chosen package to the ambient air. For surface mount devices, heat sinking is accomplished by using the heat spreading capabilities of the PC board and its copper traces. In the case of a SOT23-5 package, the thermal resistance is typically 240oC/Watt. (See Recommended Minimum Footprint) [Figure 2]. Refer to Figure 3 for the SS8014 valid operating region (Safe Operating Area) & refer to Figure 4 for the maximum power dissipation of the SOT-23-5.
1/12/2005 Rev.2.10
The die attachment area of the SS8014's lead frame is connected to pin 2, which is the GND pin. Therefore, the GND pin of SS8014 can carry away the heat of the SS8014 die very effectively. To improve the power dissipation, connect the GND pin to ground using a large ground plane near the GND pin.
Applications Information
Capacitor Selection and Regulator Stability Normally, use a 1F capacitor on the input and a 1F capacitor on the output of the SS8014. Larger input capacitor values and lower ESR provide better supply-noise rejection and transient response. A highervalue input capacitor (10F) may be necessary if large, fast transients are anticipated and the device is located several inches from the power source. For stable operation over the full temperature range, with load currents up to 120mA, a minimum of 1F is recommended. Power-Supply Rejection and Operation from Sources Other than Batteries The SS8014 is designed to deliver low dropout voltages and low quiescent currents in battery powered systems. Power-supply rejection is 57dB at low frequencies as the frequency increases above 20 kHz; the output capacitor is the major contributor to the rejection of power-supply noise. When operating from sources other than batteries, improve supply-noise rejection and transient response by increasing the values of the input and output capacitors, and using passive filtering techniques. Load Transient Considerations The SS8014 load-transient response graphs show two components of the output response: a DC shift of the output voltage due to the different load currents, and the transient response. Typical overshoot for step changes in the load current from 0mA to 100mA is 12mV. Increasing the output capacitor's value and decreasing its ESR attenuates transient spikes. Input-Output (Dropout) Voltage A regulator's minimum input-output voltage differential (or dropout voltage) determines the lowest usable supply voltage. In battery-powered systems, this will determine the useful end-of-life battery voltage. Because the SS8014 uses a P-channel MOSFET pass transistor, the dropout voltage is a function of RDS(ON) multiplied by the load current.
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Layout Guide An input capacitance of ~1F is required between the SS8014 input pin and ground (the amount of the capacitance may be increased without limit), This capacitor must be located a distance of not more than 1cm from the input and return to a clean analog ground. The input capacitor filters out the input voltage spike caused by the surge current due to the inductive effect of the package pin and the printed circuit board's routing wire. Otherwise, the actual voltage at the IN pin may exceed the absolute maximum rating. The output capacitor also must be located a distance of not more than 1c m from output to a clean analog ground, so that it can filter out the output spike caused by the surge current due to the inductive effect of the package pin and the printed circuit board's routing wire. Figure 5 is the SS8014 PCB recommended layout.
Figure 2. Recommended Minimum Footprint
Safe Operating Area [Power Dissipation Limit]
400 350 300 0.5 Output Current (mA) 250 200 150 100 50 0
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 1oz Copper on SOT-23-5 Package Mounted on recommended mimimum footprint (RJA=240C/W)
Maximum Power Dissipation of SOT-23-5
0.7
Still Air 1oz Copper on SOT-23-5 Package Mounted on recommended mimimum footprint (R ? JA=240C/W)
Maximum Recommended Output Current
Still air 0.6
Power Dissipation (W)
T A=85C TA=55C T A=25 C
0.4 0.3 0.2 0.1 0
25 35 45 55 65 75 85 95 105 115 125
Input-Output Voltage Differential VIN-VOUT (V)
Amibent Temperature T A ( C)
Note: VI N(max) <= 5.5V
Figure 3. Safe Operating Area
Figure 4. Power Dissipation vs. Temperature
Figure 4 Safe Operating Area
Figure 5. Fixed Mode
*Distance between pin & capacitor must be no more than 1cm
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Physical Dimensions
D C L
E
H
e1 e
1
Tape/package orientation
A A2 A1
b
Note: 1. Package body sizes exclude mold flash protrusions or gate burrs 2. Tolerance 0.1000 mm (4mil) unless otherwise specified 3. Coplanarity: 0.1000mm 4. Dimension L is measured in gage plane SYMBOLS
A A1 A2 b C D E e e1 H L ?1
Feed Direction SOT23-5 package orientation
MIN
1.00 0.00 0.70 0.35 0.10 2.70 1.40 --------2.60 0.37 1
DIMENSIONS IN MILLIMETERS NOM
1.10 ----0.80 0.40 0.15 2.90 1.60 1.90(TYP) 0.95 2.80 -----5
MAX
1.30 0.10 0.90 0.50 0.25 3.10 1.80 --------3.00 ----9
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
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